DIODES Incorporated Single FETs, MOSFETs DMN1054UCB4-7

MOSFET N-CH 8V 2.7A X1-WLB0808-4

MOSFET N-CH 8V 2.7A X1-WLB0808-4 Product overview: DMN1054UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1054UCB4-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 718226-DMN1054UCB4-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: X1-WLB0808-4
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 4-XFBGA, WLBGA
Power Dissipation (Maximum): 740mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 8V
Id - Continuous Drain Current: 2.7A
Rds On (Maximum) at Id, Vgs: 42mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 4.5V
Gate Source Voltage (Maximum): ±5V
Input Capacitance (Ciss) (Maximum) at Vds: 908pF at 6V

N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1-WLB0808-4

N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1-WLB0808-4

N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1-WLB0808-4