DIODES Incorporated FETs - Single - DMN1045UFR4-7 DMN1045UFR4-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 801407-DMN1045UFR4-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 500mW
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 45mOhm at 3.2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 4.8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 375pF at 10V
Current - Continuous Drain (Id) at 25°C: 3.2A
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±8V

N-Channel 12V 3.2A (Ta) 500mW (Ta) Surface Mount X2-DFN1010-3

N-Channel 12V 3.2A (Ta) 500mW (Ta) Surface Mount X2-DFN1010-3

N-Channel 12V 3.2A (Ta) 500mW (Ta) Surface Mount X2-DFN1010-3

MOSFET N-CH 12V 3.2A 3DFN Product overview: DMN1045UFR4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1045UFR4-7 can be used for catalog matching and distributor lookup.