MOSFET N-CH 12V 4.8A U-WLB1010-4 Product overview: DMN1032UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1032UCB4-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033707-DMN1032UCB4-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Family Name: DMN1032UCB4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1010-4
Dimension: 4-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 450pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 26 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): CSD13302W; CSD13201W10; CSD13302WT; DMN1032UCB4;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN1032UCB4-7 | 1033707-DMN1032UCB4-7 | DMN1032UCB4-7 | DMN1032UCB4-7 | DMN1032UCB4-7 |
| Product Name | 12V 4.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1032UCB4-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 900 milliwatts | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; U-WLB1010-4 | 4-UFBGA, WLBGA | 4-UFBGA, WLBGA | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |