DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1032UCB4-7 DMN1032UCB4-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033707-DMN1032UCB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Family Name: DMN1032UCB4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1010-4
Dimension: 4-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 450pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 26 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): CSD13302W; CSD13201W10; CSD13302WT; DMN1032UCB4;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 12V 4.8A U-WLB1010-4

MOSFET N-CH 12V 4.8A U-WLB1010-4 Product overview: DMN1032UCB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1032UCB4-7 can be used for catalog matching and distributor lookup.