Manufacturer: Diodes Incorporated
Win Source Part Number: 1033707-DMN1032UCB4-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Family Name: DMN1032UCB4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-WLB1010-4
Dimension: 4-UFBGA, WLBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 450pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 26 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): CSD13302W; CSD13201W10; CSD13302WT; DMN1032UCB4;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 12V 4.8A U-WLB1010-4
MOSFET N-CH 12V 4.8A U-WLB1010-4
MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033707-DMN1032UCB4-7 | DMN1032UCB4-7 | DMN1032UCB4-7 | DMN1032UCB4-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1032UCB4-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 12 volts | 12 volts | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
