MOSFET 2N-CH 12V 5.6A 6UDFN
MOSFET 2N-CH 12V 5.6A 6UDFN Product overview: DMN1029UFDB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN1029UFDB-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 12V 5.6A 1.4W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 12V 5.6A 1.4W Surface Mount U-DFN2020-6 (Type B)
Mosfet Array 2 N-Channel (Dual) 12V 5.6A 1.4W Surface Mount U-DFN2020-6 (Type B)
Manufacturer: Diodes Incorporated
Win Source Part Number: 917143-DMN1029UFDB-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 12V 5.6A 1.4W Surface Mount U-DFN2020-6 (Type B)
Package: 6-UDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMN1029
Categories: Discrete Semiconductor Products
Case / Package: U-DFN2020-6 (Type B)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMN1029UFDB-7DIDKR, DMN1029UFDB-7DITR, DMN1029UFDB-7DICT
MOSFET 2N-CH 12V 5.6A 6UDFN
MOSFET, DUAL N-CH, 12V, 5.6A, U-DFN2020 ROHS COMPLIANT: YES
12V 5.6A 1.4W 29mΩ@5A,4.5V 1V@250uA 2 N-Channel UDFN2020-6 MOSFETs ROHS
MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN1029UFDB-7 | 289-DMN1029UFDB-7 | DMN1029UFDB-7DIDKR-ND | 917143-DMN1029UFDB-7 | DMN1029UFDB-7 | 36AJ3576 | DMN1029UFDB-7 | DMN1029UFDB-7 |
| Product Name | FET, MOSFET Arrays | 12V 5.6A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1029UFDB-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 12V, 5.6A, U-Dfn2020 Rohs Compliant Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | |||||
| IDSS | 5600 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
