MOSFET N-CH 12V 9.3A SC59 Product overview: DMN1019USN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1019USN-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033706-DMN1019USN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 680mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 9.3A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 50.6nC @ 8V
Max Input Capacitance: 2426pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10 mOhm @ 9.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59-3
MOSFET N-CH 12V 9.3A SC59
MOSFET N-CH 12V 9.3A SC59
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
12V 9.3A 680mW 10mΩ@4V,9.7A 800mV@250uA N Channel SC-59-3 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN1019USN-7 | 1033706-DMN1019USN-7 | DMN1019USN-7DICT-ND | DMN1019USN-7 | DMN1019USN-7 | 07AH3761 | DMN1019USN-7 | DMN1019USN-7 |
| Product Name | 12V 9.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019USN-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity Diodes Inc. | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | 12 volts | ||||
| PD | 1.2 milliwatts | 680 milliwatts | 680 milliwatts | 680 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
