DIODES Incorporated Single FETs, MOSFETs DMN1019UFDE-7

Description
MOSFET N CH 12V 11A U-DFN2020-6E
Request a Quote Datasheet
Description
MOSFET N CH 12V 11A U-DFN2020-6E
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMN1019UFDE-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN1019UFDE-7
Single FETs, MOSFETs DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E

MOSFET N CH 12V 11A U-DFN2020-6E

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019UFDE-7 - 137206-DMN1019UFDE-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019UFDE-7
137206-DMN1019UFDE-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019UFDE-7 137206-DMN1019UFDE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 137206-DMN1019UFDE-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690mW (Ta) Family Name: DMN1019UFDE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 50.6nC @ 8V Max Input Capacitance: 2425pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 10 mOhm @ 9.7A, 4.5V Alternative Parts (Cross-Reference): CSD13202Q2; SiA414DJ; SIA414DJ-T1-GE3; Introduction Date: March 27, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 137206-DMN1019UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 690mW (Ta)
Family Name: DMN1019UFDE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 50.6nC @ 8V
Max Input Capacitance: 2425pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10 mOhm @ 9.7A, 4.5V
Alternative Parts (Cross-Reference): CSD13202Q2; SiA414DJ; SIA414DJ-T1-GE3;
Introduction Date: March 27, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMN1019UFDE-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN1019UFDE-7DIDKR-ND
Single FETs, MOSFETs DMN1019UFDE-7DIDKR-ND
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMN1019UFDE-7DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN1019UFDE-7DITR-ND
Single FETs, MOSFETs DMN1019UFDE-7DITR-ND
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Single FETs, MOSFETs - DMN1019UFDE-7DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN1019UFDE-7DICT-ND
Single FETs, MOSFETs DMN1019UFDE-7DICT-ND
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Singapore
12V 11A MOSFET Transistor
278-DMN1019UFDE-7
12V 11A MOSFET Transistor 278-DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E Product overview: DMN1019UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1019UFDE-7 can be used for catalog matching and distributor lookup.

MOSFET N CH 12V 11A U-DFN2020-6E Product overview: DMN1019UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1019UFDE-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 12V, 11A, U-Dfn2020 Rohs Compliant Diodes Inc. - 36AJ3575 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 12V, 11A, U-Dfn2020 Rohs Compliant Diodes Inc.
36AJ3575
Mosfet, N-Ch, 12V, 11A, U-Dfn2020 Rohs Compliant Diodes Inc. 36AJ3575
MOSFET, N-CH, 12V, 11A, U-DFN2020 ROHS COMPLIANT: YES

MOSFET, N-CH, 12V, 11A, U-DFN2020 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN1019UFDE-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN1019UFDE-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E

MOSFET N CH 12V 11A U-DFN2020-6E

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN1019UFDE-7 137206-DMN1019UFDE-7 DMN1019UFDE-7DIDKR-ND 278-DMN1019UFDE-7 36AJ3575 DMN1019UFDE-7 DMN1019UFDE-7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019UFDE-7 Single FETs, MOSFETs 12V 11A MOSFET Transistor Mosfet, N-Ch, 12V, 11A, U-Dfn2020 Rohs Compliant Diodes Inc. MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts 12 volts
IDSS 11000 milliamps
PD 690 milliwatts 690 milliwatts 690 milliwatts
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