MOSFET N CH 12V 11A U-DFN2020-6E Product overview: DMN1019UFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1019UFDE-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 137206-DMN1019UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 690mW (Ta)
Family Name: DMN1019UFDE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 50.6nC @ 8V
Max Input Capacitance: 2425pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10 mOhm @ 9.7A, 4.5V
Alternative Parts (Cross-Reference): CSD13202Q2; SiA414DJ; SIA414DJ-T1-GE3;
Introduction Date: March 27, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET N CH 12V 11A U-DFN2020-6E
MOSFET N CH 12V 11A U-DFN2020-6E
MOSFET, N-CH, 12V, 11A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN1019UFDE-7 | 137206-DMN1019UFDE-7 | DMN1019UFDE-7DIDKR-ND | DMN1019UFDE-7 | DMN1019UFDE-7 | 36AJ3575 | DMN1019UFDE-7 |
| Product Name | 12V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1019UFDE-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 12V, 11A, U-Dfn2020 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 12 volts | 12 volts | 12 volts | ||||
| Transconductance | 0.0280 kS | ||||||
| PD | 690 milliwatts | 690 milliwatts | 690 milliwatts |