DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1017UCP3-7 DMN1017UCP3-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 794806-DMN1017UCP3-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 3-XDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Family Name: DMN1017UCP3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Manufacturer Package: X3-DSN1010-3 Channel Type Type: N Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 3.3V Input Capacitance (Ciss) (Maximum) @ Vds: 1503pF @ 6V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.47W Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 5A, 3.3V ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 794806-DMN1017UCP3-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 3-XDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Family Name: DMN1017UCP3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Manufacturer Package: X3-DSN1010-3 Channel Type Type: N Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 3.3V Input Capacitance (Ciss) (Maximum) @ Vds: 1503pF @ 6V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.47W Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 5A, 3.3V ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1017UCP3-7 - 794806-DMN1017UCP3-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1017UCP3-7
794806-DMN1017UCP3-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1017UCP3-7 794806-DMN1017UCP3-7
Manufacturer: Diodes Incorporated Win Source Part Number: 794806-DMN1017UCP3-7 Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 3-XDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Family Name: DMN1017UCP3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V Manufacturer Package: X3-DSN1010-3 Channel Type Type: N Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 3.3V Input Capacitance (Ciss) (Maximum) @ Vds: 1503pF @ 6V Vgs (Maximum): ±8V Power Dissipation (Maximum): 1.47W Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 5A, 3.3V ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 794806-DMN1017UCP3-7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 3-XDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Family Name: DMN1017UCP3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 3.3V
Manufacturer Package: X3-DSN1010-3
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 3.3V
Input Capacitance (Ciss) (Maximum) @ Vds: 1503pF @ 6V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 1.47W
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 5A, 3.3V
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
12V 7.5A MOSFET Transistor - 278-DMN1017UCP3-7 - ERSAELECTRONICS PTE. LTD.
Singapore
12V 7.5A MOSFET Transistor
278-DMN1017UCP3-7
12V 7.5A MOSFET Transistor 278-DMN1017UCP3-7
MOSFET N-CH 12V 7.5A X3DSN1010-3 Product overview: DMN1017UCP3-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1017UCP3-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 12V 7.5A X3DSN1010-3 Product overview: DMN1017UCP3-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN1017UCP3-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN1017UCP3-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN1017UCP3-7
MOSFET N-CH 12V 7.5A X3DSN1010-3

MOSFET N-CH 12V 7.5A X3DSN1010-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFETBVDSS: 8V-24V

MOSFET MOSFETBVDSS: 8V-24V

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 794806-DMN1017UCP3-7 278-DMN1017UCP3-7 DMN1017UCP3-7 DMN1017UCP3-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN1017UCP3-7 12V 7.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 1470 milliwatts 1.47 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 Tape & Reel (TR) 3-XDFN
Polarity N-Channel
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