DIODES Incorporated Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc. DMMT3904W

Description
TRANSISTOR, NPN MAT, 40V, 0.2A, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:200mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
Description
TRANSISTOR, NPN MAT, 40V, 0.2A, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:200mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The DMMT3904W is a matched pair of NPN small signal transistors in an SOT363 package, designed for applications requiring precise current matching such as current mirrors and differential amplifiers. Each transistor supports a maximum collector current of 200 mA and a collector-emitter voltage of 40 V, with a total power dissipation of 200 mW. The transistors are intrinsically matched with 2% matching on current gain (hFE) and 2 mV matching on base-emitter voltage (VBE). The device is housed in a surface-mount SOT363 package measuring 2.10 mm in length, 1.30 mm in width, and 0.95 mm in height. It is RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards. Moisture sensitivity is Level 1 per J-STD-020, with a thermal resistance of 625 °C/W. Electrostatic discharge protection meets HBM class 3A (4,000 V) and MM class C (400 V). Operating temperature range is -65 °C to +150 °C.

Datasheet Summary
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The DMMT3904W is a matched pair of NPN small signal transistors in an SOT363 package, designed for applications requiring precise current matching such as current mirrors and differential amplifiers. Each transistor supports a maximum collector current of 200 mA and a collector-emitter voltage of 40 V, with a total power dissipation of 200 mW. The transistors are intrinsically matched with 2% matching on current gain (hFE) and 2 mV matching on base-emitter voltage (VBE). The device is housed in a surface-mount SOT363 package measuring 2.10 mm in length, 1.30 mm in width, and 0.95 mm in height. It is RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards. Moisture sensitivity is Level 1 per J-STD-020, with a thermal resistance of 625 °C/W. Electrostatic discharge protection meets HBM class 3A (4,000 V) and MM class C (400 V). Operating temperature range is -65 °C to +150 °C.

Suppliers

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Description
Supplier Links
Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc. - 65T8215 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc.
65T8215
Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc. 65T8215
TRANSISTOR, NPN MAT, 40V, 0.2A, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:200mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR, NPN MAT, 40V, 0.2A, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:200mA; Power Dissipation Pd:200mW; DC Current Gain hFE:100hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 65T8215
Product Name Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc.
Transistor Type Transistor, Npn Mat, 40V, 0.2A, Sot363; Transistor Polarity Diodes Inc.
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