DIODES Incorporated Single FETs, MOSFETs DMJ7N70SK3-13

Description
N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252-3
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Description
N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252-3
Request a Quote Datasheet

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Single FETs, MOSFETs - DMJ7N70SK3-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMJ7N70SK3-13DITR-ND
Single FETs, MOSFETs DMJ7N70SK3-13DITR-ND
N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252-3

N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMJ7N70SK3-13 - 1033703-DMJ7N70SK3-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMJ7N70SK3-13
1033703-DMJ7N70SK3-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMJ7N70SK3-13 1033703-DMJ7N70SK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033703-DMJ7N70SK3-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 700V Continuous Drain Current at 25°C: 3.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.9nC @ 10V Max Input Capacitance: 351pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.25 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033703-DMJ7N70SK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 3.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.9nC @ 10V
Max Input Capacitance: 351pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.25 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMJ7N70SK3-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMJ7N70SK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMJ7N70SK3-13
MOSFET N-CH 700V 3.9A TO252

MOSFET N-CH 700V 3.9A TO252

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Transistor PNP 30Vceo

MOSFET Transistor PNP 30Vceo

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMJ7N70SK3-13DITR-ND 1033703-DMJ7N70SK3-13 DMJ7N70SK3-13 DMJ7N70SK3-13
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMJ7N70SK3-13 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 700 volts
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