Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 3.1A, 2.4A 1.6W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 3.1A, 2.4A 1.6W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 3.1A, 2.4A 1.6W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 868918-DMHC6070LSD-1
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 3.1A, 2.4A 1.6W Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMHC6070
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 49 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMHC6070LSD-13DIDKR,
MOSFET 2N/2P-CHA 60V 3.1A 8SO
MOSFET, N/P-CH, 60V, 3.1A ROHS COMPLIANT: YES
MOSFET 2N/2P-CH 60V 3.1A 8SO
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMHC6070LSD-13DITR-ND | 868918-DMHC6070LSD-13 | DMHC6070LSD-13 | DMHC6070LSD-13 | 28AK8436 | DMHC6070LSD-13 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMHC6070LSD-13 | FET, MOSFET Arrays | MOSFET | Mosfet, N/p-Ch, 60V, 3.1A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | TO-3 | ||
| Polarity | P-Channel | P-Channel; 2 N and 2 P-Channel (Full Bridge) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
