MOSFET 2N/2P-CH 30V 8SOIC
Manufacturer: Diodes Incorporated
Win Source Part Number: 1325336-DMHC3025LSDQ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
FET Type: 2 N and 2 P-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 1.5W
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-SOIC (0.154", 3.90mm Width)
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -DMHC3025LSDQ-13DITR
Base Product Number: DMHC3025
RoHS Status: ROHS3 Compliant
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO Product overview: DMHC3025LSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, 4.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMHC3025LSDQ-13 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
MOSFET, N/P-CH, 30V, 6A ROHS COMPLIANT: YES
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMHC3025LSDQ-13 | 1325336-DMHC3025LSDQ-13 | 289-DMHC3025LSDQ-13 | 31-DMHC3025LSDQ-13TR-ND | 28AK8433 | DMHC3025LSDQ-13 | DMHC3025LSDQ-13 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | 30V 6A 4.2A MOSFET Transistor | FET, MOSFET Arrays | Mosfet, N/p-Ch, 30V, 6A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; 2 N and 2 P-Channel (Full Bridge) | P-Channel | N-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 6000 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
