MOSFET 2N/2P-CH 30V 8SOIC
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 1325336-DMHC3025LSDQ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
FET Type: 2 N and 2 P-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 1.5W
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-SOIC (0.154", 3.90mm Width)
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -DMHC3025LSDQ-13DITR
Base Product Number: DMHC3025
RoHS Status: ROHS3 Compliant
MOSFET, N/P-CH, 30V, 6A ROHS COMPLIANT: YES
MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMHC3025LSDQ-13 | 31-DMHC3025LSDQ-13TR-ND | 1325336-DMHC3025LSDQ-13 | 28AK8433 | DMHC3025LSDQ-13 | DMHC3025LSDQ-13 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, N/p-Ch, 30V, 6A Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 N and 2 P-Channel (Full Bridge) | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 6000 milliamps |
