MOSFET 2N/2P-CH 30V 8SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 129843-DMHC3025LSD-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Family Name: DMHC3025LSD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A, 4.2A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11.7nC @ 10V
Max Input Capacitance: 590pF @ 15V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5A, 10V
Introduction Date: August 28, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO Product overview: DMHC3025LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, 4.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMHC3025LSD-13 can be used for catalog matching and distributor lookup.
30V 25mΩ@5A,10V 1.5W 2V@250uA 2PCSNChannel&2PCSPCh
MOSFET, AEC-Q101, DUAL N-CH & P-CH, 30V; Transistor Polarity:Dual N and P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; RoHS Compliant: Yes
MOSFET 2N/2P-CH 30V 6A/4.2A 8SO
MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMHC3025LSD-13 | DMHC3025LSD-13DITR-ND | 129843-DMHC3025LSD-13 | 289-DMHC3025LSD-13 | DMHC3025LSD-13 | 82Y6569 | DMHC3025LSD-13 | DMHC3025LSD-13 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMHC3025LSD-13 | 30V 6A 4.2A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, Aec-Q101, Dual N-Ch & P-Ch, 30V; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; 2 N and 2 P-Channel (Full Bridge) | P-Channel | N-Channel; P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 6000 milliamps | 6000 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
