DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG9N65CTI DMG9N65CTI

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033701-DMG9N65CTI
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ITO-220AB
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

N-Channel 650V 9A (Tc) 13W (Tc) Through Hole ITO-220AB

MOSFET N-CH 650V 9A ITO220AB Product overview: DMG9N65CTI from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG9N65CTI can be used for catalog matching and distributor lookup.