DIODES Incorporated 650V 9A MOSFET Transistor DMG9N65CT

MOSFET N-CH 650V 9A TO220AB Product overview: DMG9N65CT from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG9N65CT can be used for catalog matching and distributor lookup.

N-Channel 650V 9A (Tc) 165W (Tc) Through Hole TO-220-3

N-Channel 650V 9A (Tc) 165W (Tc) Through Hole TO-220-3

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033700-DMG9N65CT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 50