MOSFET 2P-CH 20V 4.6A 8SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033699-DMG9933USD-1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.6A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6.5nC @ 4.5V
Max Input Capacitance: 608.4pF @ 6V
Maximum Rds On at Id,Vgs: 75 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 20V 4.6A 1.15W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 20V 4.6A 1.15W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 20V 4.6A 1.15W Surface Mount 8-SO
MOSFET 2P-CH 20V 4.6A 8SO Product overview: DMG9933USD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG9933USD-13 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 4.6A 8SO
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MOSFET, DUAL, P-CH, 20V, 4.6A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG9933USD-13 | 1033699-DMG9933USD-13 | DMG9933USD-13DICT-ND | 289-DMG9933USD-13 | DMG9933USD-13 | 233-DMG9933USD-13 | DMG9933USD-13 | 28AK8431 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG9933USD-13 | FET, MOSFET Arrays | 20V 4.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2P-CH 20V 4.6A 8SO | MOSFET | Mosfet, Dual, P-Ch, 20V, 4.6A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | -20 volts | ||||
| IDSS | 4600 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
