DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13 DMG8880LSS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014395-DMG8880LSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.43W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 27.6nC @ 10V Max Input Capacitance: 1289pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 11.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13 - 014395-DMG8880LSS-13 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMG8880LSS-13DITR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG8880LSS-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014395-DMG8880LSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.43W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 27.6nC @ 10V Max Input Capacitance: 1289pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 11.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13 - 014395-DMG8880LSS-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13
014395-DMG8880LSS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13 014395-DMG8880LSS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 014395-DMG8880LSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.43W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 27.6nC @ 10V Max Input Capacitance: 1289pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 11.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014395-DMG8880LSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.43W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 27.6nC @ 10V
Max Input Capacitance: 1289pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 11.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMG8880LSS-13DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMG8880LSS-13DITR-ND
Single FETs, MOSFETs DMG8880LSS-13DITR-ND
N-Channel 30V 11.6A (Ta) 1.43W (Ta) Surface Mount 8-SO

N-Channel 30V 11.6A (Ta) 1.43W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG8880LSS-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG8880LSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG8880LSS-13
MOSFET N-CH 30V 11.6A 8SOP

MOSFET N-CH 30V 11.6A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 014395-DMG8880LSS-13 DMG8880LSS-13DITR-ND DMG8880LSS-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LSS-13 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1430 milliwatts
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