DIODES Incorporated Single FETs, MOSFETs DMG8880LK3-13

Description
N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252, (D-Pak)
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Description
N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252, (D-Pak)
Request a Quote Datasheet

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Single FETs, MOSFETs - DMG8880LK3-13-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMG8880LK3-13-ND
Single FETs, MOSFETs DMG8880LK3-13-ND
N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252, (D-Pak)

N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252, (D-Pak)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LK3-13 - 014394-DMG8880LK3-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LK3-13
014394-DMG8880LK3-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LK3-13 014394-DMG8880LK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 014394-DMG8880LK3-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.68W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 27.6nC @ 10V Max Input Capacitance: 1289pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 11.6A, 10V Alternative Parts (Cross-Reference): IRLR8113TRPBF; FDD6606_Q; STD90NS3LLH7; Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014394-DMG8880LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.68W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 27.6nC @ 10V
Max Input Capacitance: 1289pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 11.6A, 10V
Alternative Parts (Cross-Reference): IRLR8113TRPBF; FDD6606_Q; STD90NS3LLH7;
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG8880LK3-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG8880LK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG8880LK3-13
MOSFET N-CH 30V 11A TO252

MOSFET N-CH 30V 11A TO252

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMG8880LK3-13-ND 014394-DMG8880LK3-13 DMG8880LK3-13
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8880LK3-13 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 30 volts
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