DIODES Incorporated FET, MOSFET Arrays DMG8822UTS-13

MOSFET 2N-CH 20V 4.9A 8TSSOP

MOSFET 2N-CH 20V 4.9A 8TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 4.9A (Ta) 870mW Surface Mount 8-TSSOP

MOSFET 2N-CH 20V 4.9A 8TSSOP Product overview: DMG8822UTS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG8822UTS-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 116754-DMG8822UTS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: DMG8822UTS
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 9.6nC @ 4.5V
Max Input Capacitance: 841pF @ 10V
Maximum Rds On at Id,Vgs: 25 mOhm @ 8.2A, 4.5V
Alternative Parts (Cross-Reference): FTD2011; SI6926ADQ-T1-GE3; Si6926ADQ; SI6926ADQ-T1;
Introduction Date: June 08, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance