MOSFET 2N-CH 20V 4.9A 8TSSOP
MOSFET 2N-CH 20V 4.9A 8TSSOP
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 4.9A (Ta) 870mW Surface Mount 8-TSSOP
MOSFET 2N-CH 20V 4.9A 8TSSOP Product overview: DMG8822UTS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG8822UTS-13 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 116754-DMG8822UTS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: DMG8822UTS
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 9.6nC @ 4.5V
Max Input Capacitance: 841pF @ 10V
Maximum Rds On at Id,Vgs: 25 mOhm @ 8.2A, 4.5V
Alternative Parts (Cross-Reference): FTD2011; SI6926ADQ-T1-GE3; Si6926ADQ; SI6926ADQ-T1;
Introduction Date: June 08, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
MOSFET 2N-CH 20V 4.9A 8TSSOP
MOSFET 2N-CH 20V 4.9A 8TSSOP
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 31-DMG8822UTS-13CT-ND | 289-DMG8822UTS-13 | 116754-DMG8822UTS-13 | DMG8822UTS-13 | DMG8822UTS-13 | 233-DMG8822UTS-13 |
| Product Name | FET, MOSFET Arrays | 20V 4.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG8822UTS-13 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 20V 4.9A 8TSSOP |
| Package Type | "8-TSSOP (0.173"", 4.40mm Width)" | Tape & Reel (TR) | SOT3; 8-TSSOP | Automotive | ||
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts |