DIODES Incorporated 20V 6.1A MOSFET Transistor DMG8601UFG-7

MOSFET 2N-CH 20V 6.1A 8DFN Product overview: DMG8601UFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG8601UFG-7 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.1A 920mW Surface Mount U-DFN3030-8

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.1A 920mW Surface Mount U-DFN3030-8

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.1A 920mW Surface Mount U-DFN3030-8

Manufacturer: Diodes Incorporated
Win Source Part Number: 080565-DMG8601UFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN3030-8
Maximum Power Dissipation: 920mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.1A
Gate-Source Threshold Voltage: 1.05V @ 250μA
Max Gate Charge: 8.8nC @ 4.5V
Max Input Capacitance: 143pF @ 10V
Maximum Rds On at Id,Vgs: 23 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance