DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13 DMG7702SFG-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033694-DMG7702SFG-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 890mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 14.7nC @ 10V
Max Input Capacitance: 4310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

MOSFET N-CH 30V 12A POWERDI3333 Product overview: DMG7702SFG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG7702SFG-13 can be used for catalog matching and distributor lookup.