DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13 DMG7702SFG-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033694-DMG7702SFG-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033694-DMG7702SFG-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13 - 1033694-DMG7702SFG-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13
1033694-DMG7702SFG-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13 1033694-DMG7702SFG-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033694-DMG7702SFG-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerDI3333-8 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14.7nC @ 10V Max Input Capacitance: 4310pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033694-DMG7702SFG-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 890mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 14.7nC @ 10V
Max Input Capacitance: 4310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG7702SFG-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG7702SFG-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG7702SFG-13
MOSFET N-CH 30V 12A POWERDI3333

MOSFET N-CH 30V 12A POWERDI3333

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1033694-DMG7702SFG-13 DMG7702SFG-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG7702SFG-13 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 890 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

 - AUIRFN8458TR - Rochester Electronics
Specs
Package Type DUAL PQFN 5X6 8L
Packing Method Tape Reel; Tape & Reel
View Details
6 suppliers
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers