DIODES Incorporated 30V 9.8A MOSFET Transistor DMG7401SFGQ-7

MOSFET P-CH 30V 9.8A PWRDI3333-8 Product overview: DMG7401SFGQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG7401SFGQ-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1168087-DMG7401SFGQ-7
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerWDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Family Name: DMG7401SFGQ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Manufacturer Homepage: www.diodes.com
Manufacturer Package: PowerDI3333-8
Channel Type Type: P
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2987pF @ 15V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 940mW (Ta)
Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 12A, 20V
Alternative Parts (Cross-Reference): SIS439DNT-T1-GE3; SiS427EDN-T1-GE3; Si7617DN-T1-GE3;
Introduction Date: September 15, 2015
ECCN: EAR99
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8