Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
MOSFET N/P-CH 30V 3.4A TSOT26 Product overview: DMG6602SVTQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6602SVTQ-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 801183-DMG6602SVTQ-7
Packaging: Reel
Mounting Style: SMD
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 840mW
Supplier Device Package: TSOT-26
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 60mOhm at 3.1A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 15V
Current - Continuous Drain (Id) at 25°C: 3.4A, 2.8A
Vgs(th) (Maximum) at Id: 2.3V at 250μA
MOSFET N/P-CH 30V TSOT26
MOSFET, AEC-Q101, COMPLEMENT, 30V, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes
MOSFET, AEC-Q101, COMPLEMENT, 30V, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes
MOSFET 30V Vds 20V Vgs Complmtry Enh FET
MOSFET N/P-CH 30V 3.4A TSOT26
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMG6602SVTQ-7DIDKR-ND | 289-DMG6602SVTQ-7 | 801183-DMG6602SVTQ-7 | DMG6602SVTQ-7 | 07AH3751 | DMG6602SVTQ-7 | DMG6602SVTQ-7 |
| Product Name | FET, MOSFET Arrays | 30V 3.4A MOSFET Transistor | FETs - Arrays - DMG6602SVTQ-7 | FET, MOSFET Arrays | Mosfet, Aec-Q101, Complement, 30V, Tsot26; Transistor Polarity Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | SOT3; SOT23; SOT26 | SOT23; SOT26; SOT-23-6 Thin, TSOT-23-6 | TO-3 | ||
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| Transconductance | 0.0040 to 0.0060 kS |
