DIODES Incorporated END - OF - LIFE - DMG6602SVT DMG6602SVT

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1168082-DMG6602SVT Manufacturer Homepage: www.diodes.com Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • END - OF - LIFE - DMG6602SVT - 1168082-DMG6602SVT - Win Source Electronics
    Win Source Electronics
  • Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN - 233-DMG6602SVT - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, Np Channel, Com Pair, 30V, Tsot23; Transistor Polarity Diodes Inc. - 65T8213 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1168082-DMG6602SVT Manufacturer Homepage: www.diodes.com Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
END - OF - LIFE - DMG6602SVT - 1168082-DMG6602SVT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
END - OF - LIFE - DMG6602SVT
1168082-DMG6602SVT
END - OF - LIFE - DMG6602SVT 1168082-DMG6602SVT
Manufacturer: Diodes Incorporated Win Source Part Number: 1168082-DMG6602SVT Manufacturer Homepage: www.diodes.com Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1168082-DMG6602SVT
Manufacturer Homepage: www.diodes.com
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN - 233-DMG6602SVT - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN
233-DMG6602SVT
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN 233-DMG6602SVT
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN

Supplier's Site
Mosfet, Np Channel, Com Pair, 30V, Tsot23; Transistor Polarity Diodes Inc. - 65T8213 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Np Channel, Com Pair, 30V, Tsot23; Transistor Polarity Diodes Inc.
65T8213
Mosfet, Np Channel, Com Pair, 30V, Tsot23; Transistor Polarity Diodes Inc. 65T8213
MOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Surface Mount; MSL:- RoHS Compliant: Yes

MOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Surface Mount; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1168082-DMG6602SVT 233-DMG6602SVT 65T8213
Product Name END - OF - LIFE - DMG6602SVT Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN Mosfet, Np Channel, Com Pair, 30V, Tsot23; Transistor Polarity Diodes Inc.
MOSFET Operating Mode Enhancement
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