MOSFET N/P-CH 30V TSOT23-6
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23
Manufacturer: Diodes Incorporated
Win Source Part Number: 098349-DMG6602SVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMG6602SVT
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-23-6
Maximum Power Dissipation: 840mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.4A, 2.8A
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 400pF @ 15V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): AO6602; AO6601; AO6602L;
Introduction Date: July 19, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
30V 60mΩ@3.1A,10V 840mW 2.3V@250uA 1PCSN-Channel&1PCSP-
MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
MOSFET N/P-CH 30V 3.4A TSOT26
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG6602SVT-7 | DMG6602SVT-7DICT-ND | 098349-DMG6602SVT-7 | DMG6602SVT-7 | DMG6602SVT-7 | DMG6602SVT-7 | 07AH3749 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7 | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 3400 milliamps | 3400 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
