DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7 DMG6602SVT-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 098349-DMG6602SVT-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG6602SVT Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TSOT-23-6 Maximum Power Dissipation: 840mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.4A, 2.8A Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): AO6602; AO6601; AO6602L; Introduction Date: July 19, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 098349-DMG6602SVT-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG6602SVT Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TSOT-23-6 Maximum Power Dissipation: 840mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.4A, 2.8A Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): AO6602; AO6601; AO6602L; Introduction Date: July 19, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7 - 098349-DMG6602SVT-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7
098349-DMG6602SVT-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7 098349-DMG6602SVT-7
Manufacturer: Diodes Incorporated Win Source Part Number: 098349-DMG6602SVT-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: DMG6602SVT Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TSOT-23-6 Maximum Power Dissipation: 840mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.4A, 2.8A Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 400pF @ 15V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): AO6602; AO6601; AO6602L; Introduction Date: July 19, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 098349-DMG6602SVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMG6602SVT
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-23-6
Maximum Power Dissipation: 840mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.4A, 2.8A
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 400pF @ 15V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): AO6602; AO6601; AO6602L;
Introduction Date: July 19, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
30V 3.4A MOSFET Transistor
289-DMG6602SVT-7
30V 3.4A MOSFET Transistor 289-DMG6602SVT-7
MOSFET N/P-CH 30V 3.4A TSOT26 Product overview: DMG6602SVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6602SVT-7 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 3.4A TSOT26 Product overview: DMG6602SVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6602SVT-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - DMG6602SVT-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMG6602SVT-7
FET, MOSFET Arrays DMG6602SVT-7
MOSFET N/P-CH 30V TSOT23-6

MOSFET N/P-CH 30V TSOT23-6

Supplier's Site Datasheet
FET, MOSFET Arrays - DMG6602SVT-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6602SVT-7DICT-ND
FET, MOSFET Arrays DMG6602SVT-7DICT-ND
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Buy Now Datasheet
FET, MOSFET Arrays - DMG6602SVT-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6602SVT-7DIDKR-ND
FET, MOSFET Arrays DMG6602SVT-7DIDKR-ND
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Buy Now Datasheet
FET, MOSFET Arrays - DMG6602SVT-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6602SVT-7DITR-ND
FET, MOSFET Arrays DMG6602SVT-7DITR-ND
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K

MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K

Buy Now Datasheet
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. - 07AH3749 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc.
07AH3749
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. 07AH3749
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes

MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. - 07AH3748 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc.
07AH3748
Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. 07AH3748
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes

MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMG6602SVT-7
Triode/MOS Tube/Transistor >> MOSFETs DMG6602SVT-7
30V 60mΩ@3.1A,10V 840mW 2.3V@250uA 1PCSN-Channel&1PCSP- Channel TSOT-23-6 MOSFETs ROHS

30V 60mΩ@3.1A,10V 840mW 2.3V@250uA 1PCSN-Channel&1PCSP-Channel TSOT-23-6 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG6602SVT-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG6602SVT-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG6602SVT-7
MOSFET N/P-CH 30V 3.4A TSOT26

MOSFET N/P-CH 30V 3.4A TSOT26

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 098349-DMG6602SVT-7 289-DMG6602SVT-7 DMG6602SVT-7 DMG6602SVT-7DICT-ND DMG6602SVT-7 07AH3749 DMG6602SVT-7 DMG6602SVT-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6602SVT-7 30V 3.4A MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Mosfet, Complementary, 30V, 3.4A, Tsot26; Transistor Polarity Diodes Inc. Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel N-Channel; P-Channel P-Channel; N and P-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts 30 volts
PD 840 milliwatts 840 milliwatts 840 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; TSOT-23-6 Tape & Reel (TR) SOT23; SOT26; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 SOT23
Unlock Full Specs
to access all available technical data