MOSFET N/P-CH 30V 3.8A TSOT26 Product overview: DMG6601LVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6601LVT-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033685-DMG6601LVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: DMG6601LVT
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-26
Maximum Power Dissipation: 850mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.8A, 2.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12.3nC @ 10V
Max Input Capacitance: 422pF @ 15V
Maximum Rds On at Id,Vgs: 55 mOhm @ 3.4A, 10V
Alternative Parts (Cross-Reference): AO6601; AO6602L; AO6602;
Introduction Date: July 06, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-23
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-23
MOSFET 30V Comp ENH Mode 25 to 30V MosFET
MOSFET, N & P-CH, 30V, TSOT-26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET N/P-CH 30V 3.8A TSOT26
30V 55mΩ@3.4A,10V 850mW 1.5V@250uA 1PCSN-Channel&1PCSP-
MOSFET N/P-CH 30V 26TSOT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMG6601LVT-7 | 1033685-DMG6601LVT-7 | DMG6601LVT-7DITR-ND | DMG6601LVT-7 | 82Y6568 | DMG6601LVT-7 | DMG6601LVT-7 | DMG6601LVT-7 |
| Product Name | 30V 3.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6601LVT-7 | FET, MOSFET Arrays | MOSFET | Mosfet, N & P-Ch, 30V, Tsot-26; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | FET, MOSFET Arrays |
| Polarity | N-Channel; P-Channel | P-Channel | N-Channel | P-Channel; N and P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.3 milliwatts | 850 milliwatts | 850 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
