Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033683-DMG6301UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: DMG6301UDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 240mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.36nC @ 4.5V
Max Input Capacitance: 27.9pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.
MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 25V 0.24A SOT363
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG6301UDW-7DITR-ND | 1033683-DMG6301UDW-7 | 289-DMG6301UDW-7 | 39AH6592 | DMG6301UDW-7 | DMG6301UDW-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 | 25V 0.24A MOSFET Transistor | Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SOT-363 | Tape & Reel (TR) | TO-3 | ||
| Polarity | N-Channel | N-Channel | ||||
| V(BR)DSS | 25 volts | 25 volts | ||||
| PD | 300 milliwatts | 370 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |