DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 DMG6301UDW-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033683-DMG6301UDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Family Name: DMG6301UDW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.36nC @ 4.5V Max Input Capacitance: 27.9pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033683-DMG6301UDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Family Name: DMG6301UDW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.36nC @ 4.5V Max Input Capacitance: 27.9pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 - 1033683-DMG6301UDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7
1033683-DMG6301UDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 1033683-DMG6301UDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033683-DMG6301UDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Family Name: DMG6301UDW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.36nC @ 4.5V Max Input Capacitance: 27.9pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033683-DMG6301UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: DMG6301UDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 240mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.36nC @ 4.5V
Max Input Capacitance: 27.9pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
25V 0.24A MOSFET Transistor
289-DMG6301UDW-7
25V 0.24A MOSFET Transistor 289-DMG6301UDW-7
MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - DMG6301UDW-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DIDKR-ND
FET, MOSFET Arrays DMG6301UDW-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMG6301UDW-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DITR-ND
FET, MOSFET Arrays DMG6301UDW-7DITR-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMG6301UDW-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DICT-ND
FET, MOSFET Arrays DMG6301UDW-7DICT-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Buy Now Datasheet
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. - 39AH6592 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc.
39AH6592
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. 39AH6592
MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG6301UDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG6301UDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG6301UDW-7
MOSFET 2N-CH 25V 0.24A SOT363

MOSFET 2N-CH 25V 0.24A SOT363

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W

MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033683-DMG6301UDW-7 289-DMG6301UDW-7 DMG6301UDW-7DIDKR-ND 39AH6592 DMG6301UDW-7 DMG6301UDW-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 25V 0.24A MOSFET Transistor FET, MOSFET Arrays Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 300 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-363 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 TO-3
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