DIODES Incorporated FET, MOSFET Arrays DMG6301UDW-7

Description
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363
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Description
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMG6301UDW-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DITR-ND
FET, MOSFET Arrays DMG6301UDW-7DITR-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

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FET, MOSFET Arrays - DMG6301UDW-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DIDKR-ND
FET, MOSFET Arrays DMG6301UDW-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

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FET, MOSFET Arrays - DMG6301UDW-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG6301UDW-7DICT-ND
FET, MOSFET Arrays DMG6301UDW-7DICT-ND
Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 - 1033683-DMG6301UDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7
1033683-DMG6301UDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 1033683-DMG6301UDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033683-DMG6301UDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Family Name: DMG6301UDW Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 240mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.36nC @ 4.5V Max Input Capacitance: 27.9pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033683-DMG6301UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: DMG6301UDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 240mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.36nC @ 4.5V
Max Input Capacitance: 27.9pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
25V 0.24A MOSFET Transistor
289-DMG6301UDW-7
25V 0.24A MOSFET Transistor 289-DMG6301UDW-7
MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. - 39AH6592 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc.
39AH6592
Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. 39AH6592
MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG6301UDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG6301UDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG6301UDW-7
MOSFET 2N-CH 25V 0.24A SOT363

MOSFET 2N-CH 25V 0.24A SOT363

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W

MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMG6301UDW-7DITR-ND 1033683-DMG6301UDW-7 289-DMG6301UDW-7 39AH6592 DMG6301UDW-7 DMG6301UDW-7
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG6301UDW-7 25V 0.24A MOSFET Transistor Mosfet, Dual N-Ch, 25V, 0.24A, 0.3W; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SOT-363 Tape & Reel (TR) TO-3
Polarity N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 300 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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