DIODES Incorporated 25V 0.24A MOSFET Transistor DMG6301UDW-7

MOSFET 2N-CH 25V 0.24A SOT363 Product overview: DMG6301UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 0.24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6301UDW-7 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Surface Mount SOT-363

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033683-DMG6301UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: DMG6301UDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 240mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.36nC @ 4.5V
Max Input Capacitance: 27.9pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N-F085P; FDG6301N_F085; FDG6301N_D87Z;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient