DIODES Incorporated FET, MOSFET Arrays DMG5802LFX-7

MOSFET 2N-CH 24V 6.5A 6DFN

Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6.5A 980mW Surface Mount W-DFN5020-6

Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6.5A 980mW Surface Mount W-DFN5020-6

Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6.5A 980mW Surface Mount W-DFN5020-6

MOSFET 2N-CH 24V 6.5A 6DFN Product overview: DMG5802LFX-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 24V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24V, 6.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG5802LFX-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 109030-DMG5802LFX-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: DMG5802LFX
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: W-DFN5020-6
Maximum Power Dissipation: 980mW
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 6.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 31.3nC @ 10V
Max Input Capacitance: 1066.4pF @ 15V
Maximum Rds On at Id,Vgs: 15 mOhm @ 6.5A, 4.5V
Introduction Date: January 14, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient