Manufacturer: Diodes Incorporated
Win Source Part Number: 1033677-DMG4N65CTI
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.35W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ITO-220AB
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13.5nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
MOSFET N-CH 650V 4A ITO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1033677-DMG4N65CTI | DMG4N65CTIDDI-ND | DMG4N65CTI |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4N65CTI | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 8350 milliwatts |
