Manufacturer: Diodes Incorporated
Win Source Part Number: 110016-DMG4812SSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Power Dissipation (Max): 1.54W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 18.5nC @ 10V
Max Input Capacitance: 1849pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 15 mOhm @ 10.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
N-Channel 30V 8A (Ta) 1.54W (Ta) Surface Mount 8-SO
MOSFET N-CH 30V 8A 8SO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 110016-DMG4812SSS-13 | DMG4812SSS-13DITR-ND | DMG4812SSS-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4812SSS-13 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 1540 milliwatts |
