DIODES Incorporated Single FETs, MOSFETs DMG4800LK3-13

MOSFET N-CH 30V 10A TO252-3

N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3

N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3

N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3

MOSFET N-CH 30V 10A TO252-3 Product overview: DMG4800LK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG4800LK3-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 014389-DMG4800LK3-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.71W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 8.7nC @ 5V
Max Input Capacitance: 798pF @ 10V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 17 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited