DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13 DMG4435SSS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014383-DMG4435SSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 35.4nC @ 10V Max Input Capacitance: 1614pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 11A, 20V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13 - 014383-DMG4435SSS-13 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMG4435SSS-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8 - 233-DMG4435SSS-13 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG4435SSS-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014383-DMG4435SSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 35.4nC @ 10V Max Input Capacitance: 1614pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 11A, 20V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13 - 014383-DMG4435SSS-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13
014383-DMG4435SSS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13 014383-DMG4435SSS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 014383-DMG4435SSS-13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 35.4nC @ 10V Max Input Capacitance: 1614pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 11A, 20V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014383-DMG4435SSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.3A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 35.4nC @ 10V
Max Input Capacitance: 1614pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 16 mOhm @ 11A, 20V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMG4435SSS-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMG4435SSS-13
Single FETs, MOSFETs DMG4435SSS-13
MOSFET P-CH 30V 7.3A 8SOP

MOSFET P-CH 30V 7.3A 8SOP

Supplier's Site
P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8 - 233-DMG4435SSS-13 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8
233-DMG4435SSS-13
P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8 233-DMG4435SSS-13
P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8

P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMG4435SSS-13
MOSFET DMG4435SSS-13
MOSFET MOSFET,P-CHANNEL

MOSFET MOSFET,P-CHANNEL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG4435SSS-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG4435SSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG4435SSS-13
MOSFET P-CH 30V 7.3A 8SOP

MOSFET P-CH 30V 7.3A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 014383-DMG4435SSS-13 DMG4435SSS-13 233-DMG4435SSS-13 DMG4435SSS-13 DMG4435SSS-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4435SSS-13 Single FETs, MOSFETs P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SOP 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width)
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