DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS DMG4407SSS

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 203319-DMG4407SSS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.45W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.5nC @ 10V Max Input Capacitance: 2246pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 20V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 203319-DMG4407SSS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.45W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.5nC @ 10V Max Input Capacitance: 2246pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 20V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS - 203319-DMG4407SSS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS
203319-DMG4407SSS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS 203319-DMG4407SSS
Manufacturer: Diodes Incorporated Win Source Part Number: 203319-DMG4407SSS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.45W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.5nC @ 10V Max Input Capacitance: 2246pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 20V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 203319-DMG4407SSS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.45W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20.5nC @ 10V
Max Input Capacitance: 2246pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 20V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 203319-DMG4407SSS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 1450 milliwatts
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