DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4407SSS DMG4407SSS

Manufacturer: Diodes Incorporated
Win Source Part Number: 203319-DMG4407SSS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.45W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20.5nC @ 10V
Max Input Capacitance: 2246pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 20V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

MOSFET P-CH 30V 9.9A 8-SO Product overview: DMG4407SSS from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-DMG4407SSS can be used for catalog matching and distributor lookup.