DIODES Incorporated MOSFET DMG3N60SJ3

DMG3N60SJ3 is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications such as motor control, DC-DC converters, and backlighting. It is packaged in a TO-251 (Type TH) case, measuring 16.52 mm in height, 6.10 mm in width, and 9.40 mm in length with a 2.286 mm lead pitch. The device has a drain-source breakdown voltage of 600 V, a maximum on-resistance of 3.5 Ω at VGS = 10 V and ID = 1.5 A, and a continuous drain current of 2.8 A at TC = 25°C. It supports a gate-source voltage of ±30 V, has a thermal resistance from junction to case of 3.0 °C/W, and operates across a junction temperature range of -55°C to +150°C. The part is RoHS compliant, halogen and antimony free, meets UL 94 V-0 flammability rating, and is moisture sensitive level 1 per J-STD-020. It is supplied in tubes of 75 pieces.