MOSFET P-CH 20V 4A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 014381-DMG3415U-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 900mW (Ta)
Family Name: DMG3415U
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9.1nC @ 4.5V
Max Input Capacitance: 294pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 39 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): Si2323DDS-T1-GE3; Si2331DS-T1-GE3; Si2331DS-E3;
Introduction Date: April 06, 2009
ECCN: EAR99
Country of Origin: China
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET P-CH 20V 4A SOT23-3 Product overview: DMG3415U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG3415U-7 can be used for catalog matching and distributor lookup.
P-Channel 20V 4A (Ta) 900mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 4A (Ta) 900mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 4A (Ta) 900mW (Ta) Surface Mount SOT-23-3
MOSFET, P CHANNEL, -20V, -4A, SOT-23; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET P-CH 20V 4A SOT23-3
20V 4A 39mΩ@4.5V,4A 900mW 1V@250uA P Channel SOT-23 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG3415U-7 | 014381-DMG3415U-7 | 278-DMG3415U-7 | DMG3415UDICT-ND | 12T2026 | DMG3415U-7 | DMG3415U-7 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG3415U-7 | 20V 4A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, P Channel, -20V, -4A, Sot-23; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| IDSS | 4000 milliamps | 4000 milliamps | |||||
| PD | 900 milliwatts | 900 milliwatts | 900 milliwatts | 900 milliwatts |
