MOSFET N-CH 20V 4.2A SOT23-3 Product overview: DMG3414UQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG3414UQ-7 can be used for catalog matching and distributor lookup.
N-Channel 20V 4.2A (Ta) 780mW Surface Mount SOT-23-3
MOSFET N-CH 20V 4.2A SOT23-3
MOSFET N-CH 20V 4.2A SOT23-3
MOSFET N-CH 20V 4.2A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 805896-DMG3414UQ-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 780mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
Rds On (Maximum) at Id, Vgs: 25mOhm at 8.2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 9.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 829.9pF at 10V
Current - Continuous Drain (Id) at 25°C: 4.2A
Vgs(th) (Maximum) at Id: 900mV at 250μA
Maximum Vgs: ±8V
MOSFET N-CH 20V 4.2A SOT23-3
MOSFET, N-CH, 20V, 4.2A, SOT-23 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMG3414UQ-7 | 31-DMG3414UQ-7TR-ND | DMG3414UQ-7 | 805896-DMG3414UQ-7 | DMG3414UQ-7 | DMG3414UQ-7 | 28AK8407 |
| Product Name | 20V 4.2A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - DMG3414UQ-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 4.2A, Sot-23 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 780 milliwatts | 780 milliwatts | 780 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
