DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG3407SSN-7 DMG3407SSN-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033673-DMG3407SSN-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4.1A, 10V
Alternative Parts (Cross-Reference): AO3401A; WPM3407C-3/TR; DMG3407SSN-7; DMG3401LSN-7;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

MOSFET P-CH 30V 4A SC59

MOSFET P-CH 30V 4A SC59

P-Channel 30V 4A (Ta) 1.1W (Ta) Surface Mount SC-59-3

MOSFET P-CH 30V 4A SC59 Product overview: DMG3407SSN-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG3407SSN-7 can be used for catalog matching and distributor lookup.