DIODES Incorporated Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc. DMG2307L

Description
MOSFET, P CHANNEL, 30V, 3.8A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Description
MOSFET, P CHANNEL, 30V, 3.8A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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P-channel enhancement mode MOSFET designed for high-efficiency power management, mounted in an SOT-23 package measuring 2.90 mm in length, 1.30 mm in width, and 0.915 mm in height. It has a drain-source voltage rating of -30 V, a continuous drain current of -3.8 A at VGS = -10 V and TA = +25°C, and a maximum on-resistance of 90 mΩ at VGS = -10 V and ID = -2.5 A. The device is qualified to AEC-Q101 standards, meets RoHS and UL 94 V-0 requirements, and is halogen- and antimony-free. Thermal resistance from junction to ambient is 159 °C/W on a minimum pad layout. Operating temperature ranges from -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

P-channel enhancement mode MOSFET designed for high-efficiency power management, mounted in an SOT-23 package measuring 2.90 mm in length, 1.30 mm in width, and 0.915 mm in height. It has a drain-source voltage rating of -30 V, a continuous drain current of -3.8 A at VGS = -10 V and TA = +25°C, and a maximum on-resistance of 90 mΩ at VGS = -10 V and ID = -2.5 A. The device is qualified to AEC-Q101 standards, meets RoHS and UL 94 V-0 requirements, and is halogen- and antimony-free. Thermal resistance from junction to ambient is 159 °C/W on a minimum pad layout. Operating temperature ranges from -55 °C to +150 °C.

Suppliers

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Product
Description
Supplier Links
Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc. - 65T8209 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc.
65T8209
Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc. 65T8209
MOSFET, P CHANNEL, 30V, 3.8A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, P CHANNEL, 30V, 3.8A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 65T8209
Product Name Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc.
Polarity P-Channel
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