P-channel enhancement mode MOSFET designed for high-efficiency power management, mounted in an SOT-23 package measuring 2.90 mm in length, 1.30 mm in width, and 0.915 mm in height. It has a drain-source voltage rating of -30 V, a continuous drain current of -3.8 A at VGS = -10 V and TA = +25°C, and a maximum on-resistance of 90 mΩ at VGS = -10 V and ID = -2.5 A. The device is qualified to AEC-Q101 standards, meets RoHS and UL 94 V-0 requirements, and is halogen- and antimony-free. Thermal resistance from junction to ambient is 159 °C/W on a minimum pad layout. Operating temperature ranges from -55 °C to +150 °C.
MOSFET, P CHANNEL, 30V, 3.8A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 65T8209 |
| Product Name | Mosfet, P Channel, 30V, 3.8A, Sot23; Channel Type Diodes Inc. |
| Polarity | P-Channel |