MOSFET P-CH 20V 4.2A SOT23 Product overview: DMG2305UXQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG2305UXQ-7 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 4.2A SOT23
MOSFET P-CH 20V 4.2A SOT23
P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
MOSFET P-CH 20V 4.2A SOT23
Manufacturer: Diodes Incorporated
Win Source Part Number: 802549-DMG2305UXQ-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 1.4W
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 52mOhm at 4.2A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 10.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 808pF at 15V
Current - Continuous Drain (Id) at 25°C: 4.2A
Vgs(th) (Maximum) at Id: 900mV at 250μA
Maximum Vgs: ±8V
MOSFET, P-CH, 20V, 4.2A, SOT-23 ROHS COMPLIANT: YES
MOSFET P-CH 20V 4.2A SOT23
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMG2305UXQ-7 | DMG2305UXQ-7 | 31-DMG2305UXQ-7DKR-ND | 802549-DMG2305UXQ-7 | DMG2305UXQ-7 | 28AK8400 | DMG2305UXQ-7 |
| Product Name | 20V 4.2A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - DMG2305UXQ-7 | MOSFET | Mosfet, P-Ch, 20V, 4.2A, Sot-23 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 1.4 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
