DIODES Incorporated Single FETs, MOSFETs DMG2302UQ-7

N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3

MOSFET N-CH 20V 4.2A SOT23-3 Product overview: DMG2302UQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG2302UQ-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 4.2A SOT23-3

Manufacturer: Diodes Incorporated
Win Source Part Number: 802499-DMG2302UQ-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 800mW
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 90mOhm at 3.6A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 7nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 594.3pF at 10V
Current - Continuous Drain (Id) at 25°C: 4.2A
Vgs(th) (Maximum) at Id: 1V at 50μA
Maximum Vgs: ±8V