N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 20V 4.2A SOT23-3 Product overview: DMG2302U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG2302U-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 4.2A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 014377-DMG2302U-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Ta)
Family Name: DMG2302U
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 50μA
Max Gate Charge: 7nC @ 4.5V
Max Input Capacitance: 594.3pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.6A, 4.5V
Alternative Parts (Cross-Reference): NTR4501NT3; PMV65UN; NTR4501N;
Introduction Date: June 17, 2009
ECCN: EAR99
Country of Origin: China
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET N-CH 20V 4.2A SOT23-3
20V 4.2A 800mW 90mΩ@4.5V,3.6A 1V@50uA N Channel SOT-23 MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG2302U-7DITR-ND | 278-DMG2302U-7 | DMG2302U-7 | 014377-DMG2302U-7 | DMG2302U-7 | DMG2302U-7 |
| Product Name | Single FETs, MOSFETs | 20V 4.2A SOT23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG2302U-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||
| PD | 800 milliwatts | 800 milliwatts | 800 milliwatts | 800 milliwatts |