Manufacturer: Diodes Incorporated
Win Source Part Number: 868902-DMG10N60SCT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 178W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: DMG10
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Limited
Quantity per package: 50
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Affected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 12A TO220AB Product overview: DMG10N60SCT from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG10N60SCT can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 12A TO220AB
MOSFET N-CH 600V 12A TO220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 868902-DMG10N60SCT | 278-DMG10N60SCT | DMG10N60SCT | DMG10N60SCT | DMG10N60SCT |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG10N60SCT | 600V 12A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | ||||
| PD | 178 milliwatts | 178000 milliwatts |