MOSFET P-CH 20V 820MA SOT323 Product overview: DMG1013UW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 820MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 820MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1013UW-7 can be used for catalog matching and distributor lookup.
P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323
P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323
P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323
Manufacturer: Diodes Incorporated
Win Source Part Number: 040075-DMG1013UW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 310mW (Ta)
Family Name: DMG1013UW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 820mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.622nC @ 4.5V
Max Input Capacitance: 59.76pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 750 mOhm @ 430mA, 4.5V
Alternative Parts (Cross-Reference): Si1013CX-T1-GE3; DMG1013UW;
Introduction Date: September 04, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 820MA SOT323
20V 820mA 310mW 750mΩ@4.5V,430mA 1V@250uA P Channel SOT-323 MOSFETs ROHS
MOSFET P-Ch -20V VDSS Enchanced Mosfet
MOSFET, P CH, -20V, SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-820mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power DissipationRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMG1013UW-7 | DMG1013UW-7DITR-ND | 040075-DMG1013UW-7 | DMG1013UW-7 | DMG1013UW-7 | DMG1013UW-7 | 82Y6557 |
| Product Name | 20V 820MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1013UW-7 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, P Ch, -20V, Sot-323; Transistor Polarity Diodes Inc. |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| PD | 310 milliwatts | 310 milliwatts | 310 milliwatts | 310 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
