DIODES Incorporated Single FETs, MOSFETs DMG1013T-7

P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523

P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523

P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523

MOSFET P-CH 20V 460MA SOT523 Product overview: DMG1013T-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 460MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 460MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1013T-7 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 014371-DMG1013T-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 270mW (Ta)
Family Name: DMG1013T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-523
Dimension: SOT-523
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 460mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.622nC @ 4.5V
Max Input Capacitance: 59.76pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 700 mOhm @ 350mA, 4.5V
Alternative Parts (Cross-Reference): PMR670UPE,115; PMR670UPE; RE1C002ZPTL;
Introduction Date: July 08, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient