DIODES Incorporated Single FETs, MOSFETs DMG1012UWQ-7

MOSFET BVDSS: 8V~24V SOT323 T&R

MOSFET BVDSS: 8V~24V SOT323 T&R

MOSFET BVDSS: 8V~24V SOT323 T&R

Win Source Part Number: 1378260-DMG1012UWQ-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Product Number: DMG1012
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Vgs (Max): ±6V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Power Dissipation (Max): 460mW
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99

MOSFET BVDSS: 8V~24V SOT323 T&R Product overview: DMG1012UWQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 24V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 24V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1012UWQ-7 can be used for catalog matching and distributor lookup.