MOSFET, N CHANNEL, W ESD, 20V, 1A, SOT323; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mV RoHS Compliant: Yes
| ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG1012UW | 65T8207 |
| Product Name | Transistors | Mosfet, N Channel, W Esd, 20V, 1A, Sot323; Channel Type Diodes Inc. |
| Polarity | N-Channel |
