MOSFET, N CHANNEL, W ESD, 20V, 1A, SOT323; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mV RoHS Compliant: Yes
| Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 65T8207 | DMG1012UW |
| Product Name | Mosfet, N Channel, W Esd, 20V, 1A, Sot323; Channel Type Diodes Inc. | Transistors |
| Polarity | N-Channel |
