MOSFET N-CH 20V 1A SOT323
MOSFET N-CH 20V 1A SOT323 Product overview: DMG1012UW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1012UW-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 014370-DMG1012UW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 290mW (Ta)
Family Name: DMG1012UW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.74nC @ 4.5V
Max Input Capacitance: 60.67pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 450 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): PMF280UN,115; PMF280UN; AO5404EL;
Introduction Date: September 08, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 1A (Ta) 290mW (Ta) Surface Mount SOT-323
N-Channel 20V 1A (Ta) 290mW (Ta) Surface Mount SOT-323
N-Channel 20V 1A (Ta) 290mW (Ta) Surface Mount SOT-323
MOSFET MOSFET N-CHANNEL SOT-323
MOSFET N-CH 20V 1A SOT323
MOSFET, N-CH, 20V, 1A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
MOSFET, N-CH, 20V, 1A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG1012UW-7 | 278-DMG1012UW-7 | 014370-DMG1012UW-7 | DMG1012UW-7DITR-ND | DMG1012UW-7 | DMG1012UW-7 | 07AH3734 |
| Product Name | Single FETs, MOSFETs | 20V 1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1012UW-7 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 1A, Sot-323; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 1000 milliamps | 1000 milliamps | |||||
| PD | 290 milliwatts | 290 milliwatts | 290 milliwatts |
