MOSFET N-CH 20V 630MA SOT-523
MOSFET N-CH 20V 630MA SOT-523 Product overview: DMG1012T-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1012T-7 can be used for catalog matching and distributor lookup.
N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523
N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523
N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523
Manufacturer: Diodes Incorporated
Win Source Part Number: 014369-DMG1012T-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Family Name: DMG1012T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-523
Dimension: SOT-523
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 630mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.74nC @ 4.5V
Max Input Capacitance: 60.67pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): PMR280UN; PMR290XN,115; PMR280UN,115;
Introduction Date: July 07, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
20V 630mA 400mΩ@4.5V,600mA 280mW 1V@250uA N Channel SOT-523 MOSFETs ROHS
MOSFET, N CH, 20V, SOT-523; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 20V 630MA SOT-523
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMG1012T-7 | 278-DMG1012T-7 | DMG1012T-7DITR-ND | 014369-DMG1012T-7 | DMG1012T-7 | 82Y6555 | DMG1012T-7 | DMG1012T-7 |
| Product Name | Single FETs, MOSFETs | 20V 630MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1012T-7 | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N Ch, 20V, Sot-523; Transistor Polarity Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 630 milliamps | 630 milliamps | ||||||
| PD | 280 milliwatts | 280 milliwatts | 280 milliwatts | 280 milliwatts |
