MOSFET N-CH 20V 630MA SOT523 T&R Product overview: DMG1012T-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMG1012T-13 can be used for catalog matching and distributor lookup.
N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523
MOSFET N-CH 20V 630MA SOT523 T&R
MOSFET N-CH 20V 630MA SOT523 T&R
20V 630mA 280mW 400mΩ@600mA,4.5V 1V@250uA N Channel SOT-523 MOSFETs ROHS
MOSFET, N-CH, 20V, 0.63A, SOT-523 ROHS COMPLIANT: YES
MOSFET N-CH 20V 630MA SOT523 T&R
MOSFET 20V N-Ch Enhance Mode MOSFET
MOSFET N-CH 20V 630MA SOT523 T&R
| ERSAELECTRONICS PTE. LTD. | DigiKey | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMG1012T-13 | 31-DMG1012T-13TR-ND | DMG1012T-13 | 28AK8395 | DMG1012T-13 | DMG1012T-13 | DMG1012T-13 |
| Product Name | 20V 630MA MOSFET Transistor | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 20V, 0.63A, Sot-523 Rohs Compliant Diodes Inc. | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| Transconductance | 0.0140 kS | ||||||
| PD | 280 milliwatts | 280 milliwatts | 280 milliwatts |
