Win Source Part Number: 1376890-DMC67D8UFDBQ
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Base Product Number: DMC67
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 580mW (Ta)
Configuration: N and P-Channel Complementary
Mosfet Array N and P-Channel Complementary 60V, 20V 390mA (Ta), 2.9A (Ta) 580mW (Ta) Surface Mount U-DFN2020-6 (Type B)
MOSFET N/P-CH 60V 0.39A 6UDFN Product overview: DMC67D8UFDBQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.39A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMC67D8UFDBQ-7 can be used for catalog matching and distributor lookup.
MOSFET BVDSS: 41V-60V U-DFN2020-
MOSFET, COMPLEMENTARY/60V/0.
MOSFET N/P-CH 60V 0.39A 6UDFN
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1376890-DMC67D8UFDBQ-7 | DMC67D8UFDBQ-7DI-ND | 289-DMC67D8UFDBQ-7 | DMC67D8UFDBQ-7 | 36AJ3571 | DMC67D8UFDBQ-7 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | FET, MOSFET Arrays | 60V 0.39A MOSFET Transistor | FET, MOSFET Arrays | Mosfet, Complementary/60V/0.39A/udfn2020 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel Complementary | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | 6-UDFN Exposed Pad | Tape & Reel (TR) | 6-UDFN Exposed Pad | TO-3 | Automotive |
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement |
