Manufacturer: Diodes Incorporated
Win Source Part Number: 1033651-DMC4029SSDQ-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7A, 5.1A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19.1nC @ 10V
Max Input Capacitance: 1060pF @ 20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel Complementary 40V 9A (Ta), 6.5A (Ta) 1.8W (Ta) Surface Mount 8-SO
MOSFET N/P-CH 40V 9A 8SO
MOSFET N/P-CH 40V 9A 8SO
MOSFET N/P-CH 40V 7A/5.1A 8SO
MOSFET N/P-CH 40V 7A/5.1A 8SO
MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
MOSFET N/P-CH 40V 9A/6.5A 8SO
MOSFET, DUAL, N/P-CH, 40V, 7A ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033651-DMC4029SSDQ-13 | 31-DMC4029SSDQ-13TR-ND | DMC4029SSDQ-13 | 233-DMC4029SSDQ-13 | DMC4029SSDQ-13 | DMC4029SSDQ-13 | 28AK8387 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMC4029SSDQ-13 | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET N/P-CH 40V 7A/5.1A 8SO | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 40V, 7A Rohs Compliant Diodes Inc. |
| Polarity | P-Channel | P-Channel; N and P-Channel Complementary | |||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 1300 milliwatts | 1300 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SOIC | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | Automotive | TO-3 |
